2SA1008 Bipolar Transistor

Characteristics of 2SA1008 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1008

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1008 transistor can have a current gain of 40 to 200. The gain of the 2SA1008K will be in the range from 100 to 200, for the 2SA1008L it will be in the range from 60 to 120, for the 2SA1008M it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1008 might only be marked "A1008".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1008 is the 2SC2331.

Replacement and Equivalent for 2SA1008 transistor

You can replace the 2SA1008 with the 2SA1010, 2SB1016, 2SB1090, 2SB1367, 2SB546, 2SB546A, 2SB547, 2SB595, 2SB630, 2SB703A, 2SB995, BD240C, BD242C, BD244C, BD540C, BD802, BD940, BD940F, BD942, BD942F, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KSB546, KTB1367, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com