KSA1010R Bipolar Transistor

Characteristics of KSA1010R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SA1010M transistor

Pinout of KSA1010R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSA1010R transistor can have a current gain of 40 to 80. The gain of the KSA1010 will be in the range from 40 to 200, for the KSA1010O it will be in the range from 60 to 120, for the KSA1010Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSA1010R is the KSC2334R.

Replacement and Equivalent for KSA1010R transistor

You can replace the KSA1010R with the 2SA1010, 2SA1010M, BD712, BD744C, BD802, BD912, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com