BDT60 Bipolar Transistor
Characteristics of BDT60 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT60
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BDT60 is the
BDT61.
Replacement and Equivalent for BDT60 transistor
You can replace the BDT60 with the
2N6040,
2N6040G,
2N6041,
2N6041G,
2N6042,
2N6042G,
2N6667,
2N6667G,
2N6668,
2N6668G,
2SA1259,
2SB1020,
2SB1020A,
2SB1024,
2SB1223,
2SB1224,
2SB1225,
2SB1227,
2SB1228,
2SB1251,
2SB1251-P,
2SB1251-Q,
2SB1252,
2SB1252-P,
2SB1252-Q,
2SB1481,
2SB1626,
2SB1626-O,
2SB1626-P,
2SB1626-Y,
2SB601,
2SB601-K,
2SB601-L,
2SB601-M,
2SB673,
2SB674,
2SB675,
2SB751,
2SB751-P,
2SB751-Q,
2SB751-R,
2SB751A,
2SB751A-P,
2SB751A-Q,
2SB751A-R,
2SB880,
2SB881,
2SB882,
2SB885,
2SB886,
2SB950,
2SB950-P,
2SB950-Q,
2SB950A,
2SB950A-P,
2SB950A-Q,
2SB951,
2SB951-P,
2SB951-Q,
2SB951A,
2SB951A-P,
2SB951A-Q,
BD646,
BD648,
BD650,
BD652,
BD898,
BD898A,
BD900,
BD900A,
BD902,
BDT60A,
BDT60B,
BDT60C,
BDT62,
BDT62A,
BDT62B,
BDT62C,
BDT64,
BDT64A,
BDT64B,
BDT64C,
BDW24A,
BDW24B,
BDW24C,
BDW45,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW54A,
BDW54B,
BDW54C,
BDW54D,
BDW64A,
BDW64B,
BDW64C,
BDW64D,
BDW74A,
BDW74B,
BDW74C,
BDW74D,
BDW94A,
BDW94B,
BDW94C,
BDW94CF,
BDX34A,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54A,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
MJE700T,
MJE701T,
MJE702T,
MJE703T,
MJF127,
MJF127G,
MJF6668,
MJF6668G,
TIP105,
TIP105G,
TIP106,
TIP106G,
TIP107,
TIP107G,
TIP125,
TIP125G,
TIP126,
TIP126G,
TIP127,
TIP127G,
TIP135,
TIP135G,
TIP136,
TIP136G,
TIP137,
TIP137G,
TIP145T,
TIP146T,
TIP147T or
TTB1020B.
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