BDT60 Bipolar Transistor

Characteristics of BDT60 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT60

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT60 is the BDT61.

Replacement and Equivalent for BDT60 transistor

You can replace the BDT60 with the 2N6040, 2N6040G, 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6667, 2N6667G, 2N6668, 2N6668G, 2SA1259, 2SB1020, 2SB1020A, 2SB1024, 2SB1223, 2SB1224, 2SB1225, 2SB1227, 2SB1228, 2SB1251, 2SB1251-P, 2SB1251-Q, 2SB1252, 2SB1252-P, 2SB1252-Q, 2SB1481, 2SB1626, 2SB1626-O, 2SB1626-P, 2SB1626-Y, 2SB601, 2SB601-K, 2SB601-L, 2SB601-M, 2SB673, 2SB674, 2SB675, 2SB751, 2SB751-P, 2SB751-Q, 2SB751-R, 2SB751A, 2SB751A-P, 2SB751A-Q, 2SB751A-R, 2SB880, 2SB881, 2SB882, 2SB885, 2SB886, 2SB950, 2SB950-P, 2SB950-Q, 2SB950A, 2SB950A-P, 2SB950A-Q, 2SB951, 2SB951-P, 2SB951-Q, 2SB951A, 2SB951A-P, 2SB951A-Q, BD646, BD648, BD650, BD652, BD898, BD898A, BD900, BD900A, BD902, BDT60A, BDT60B, BDT60C, BDT62, BDT62A, BDT62B, BDT62C, BDT64, BDT64A, BDT64B, BDT64C, BDW24A, BDW24B, BDW24C, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW54A, BDW54B, BDW54C, BDW54D, BDW64A, BDW64B, BDW64C, BDW64D, BDW74A, BDW74B, BDW74C, BDW74D, BDW94A, BDW94B, BDW94C, BDW94CF, BDX34A, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54A, BDX54B, BDX54BG, BDX54C, BDX54CG, MJE700T, MJE701T, MJE702T, MJE703T, MJF127, MJF127G, MJF6668, MJF6668G, TIP105, TIP105G, TIP106, TIP106G, TIP107, TIP107G, TIP125, TIP125G, TIP126, TIP126G, TIP127, TIP127G, TIP135, TIP135G, TIP136, TIP136G, TIP137, TIP137G, TIP145T, TIP146T, TIP147T or TTB1020B.
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