BDT62 Bipolar Transistor

Characteristics of BDT62 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT62

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT62 is the BDT63.

Replacement and Equivalent for BDT62 transistor

You can replace the BDT62 with the 2N6667, 2N6667G, 2N6668, 2N6668G, 2SB1225, 2SB882, BDT62A, BDT62B, BDT62C, BDT64, BDT64A, BDT64B, BDT64C, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668, MJF6668G, TIP145T, TIP146T or TIP147T.
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