2N6667G Bipolar Transistor

Characteristics of 2N6667G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 1000 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The 2N6667G is the lead-free version of the 2N6667 transistor

Pinout of 2N6667G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

2N6667G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the 2N6667G is the 2N6387G.

Replacement and Equivalent for 2N6667G transistor

You can replace the 2N6667G with the 2N6667, 2N6668, 2N6668G, BD546A, BD546B, BD546C, BD808, BD810, BDT62, BDT62A, BDT62B, BDT62C, BDT64, BDT64A, BDT64B, BDT64C, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDX34A, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, D45H11, D45H11FP, D45H8, TIP145T, TIP146T or TIP147T.
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