BDT64 Bipolar Transistor

Characteristics of BDT64 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT64

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT64 is the BDT65.

Replacement and Equivalent for BDT64 transistor

You can replace the BDT64 with the BDT64A, BDT64B, BDT64C, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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