2SB886 Bipolar Transistor

Characteristics of 2SB886 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 1500
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB886

Here is an image showing the pin diagram of this transistor.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB886 might only be marked "B886".

Replacement and Equivalent for 2SB886 transistor

You can replace the 2SB886 with the 2SB1228, MJF6668 or MJF6668G.
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