2SB886 Bipolar Transistor
Characteristics of 2SB886 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -110 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 1500
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of 2SB886
Marking
Replacement and Equivalent for 2SB886 transistor
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