2N6667 Bipolar Transistor

Characteristics of 2N6667 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 1000 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6667

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

2N6667 equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the 2N6667 is the 2N6387.

Replacement and Equivalent for 2N6667 transistor

You can replace the 2N6667 with the 2N6667G, 2N6668, 2N6668G, BD546A, BD546B, BD546C, BD808, BD810, BDT62, BDT62A, BDT62B, BDT62C, BDT64, BDT64A, BDT64B, BDT64C, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW45, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDX34A, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, D45H11, D45H11FP, D45H8, TIP145T, TIP146T or TIP147T.

Lead-free Version

The 2N6667G transistor is the lead-free version of the 2N6667.
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