MJ900 Bipolar Transistor

Characteristics of MJ900 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ900

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJ900 is the MJ1000.

Replacement and Equivalent for MJ900 transistor

You can replace the MJ900 with the 2N6649, 2N6650, BDX62, BDX62A, BDX62B, BDX62C, BDX64, BDX64A, BDX64B, BDX64C, BDX66, BDX66A, BDX66B, BDX66C, BDX68, BDX68A, BDX68B, BDX68C, MJ11011, MJ11011G, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ11029, MJ11029G, MJ11031, MJ11031G, MJ11033, MJ11033G, MJ2500, MJ2501, MJ4030, MJ4031, MJ4032, MJ901, TIP605, TIP606, TIP607, TIP645, TIP646 or TIP647.
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