MJ11015G Bipolar Transistor

Characteristics of MJ11015G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11015G is the lead-free version of the MJ11015 transistor

Pinout of MJ11015G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11015G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11015G is the MJ11016G.

Replacement and Equivalent for MJ11015G transistor

You can replace the MJ11015G with the MJ11015, MJ11033 or MJ11033G.
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