MJ11015G Bipolar Transistor
Characteristics of MJ11015G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -30 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 1000
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The MJ11015G is the lead-free version of the MJ11015 transistor
Pinout of MJ11015G
Equivalent circuit
Complementary NPN transistor
Replacement and Equivalent for MJ11015G transistor
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