TIP647 Bipolar Transistor
Characteristics of TIP647 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 175 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -55 to +200 °C
- Package: TO-3
Pinout of TIP647
Complementary NPN transistor
Replacement and Equivalent for TIP647 transistor
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