BDX66 Bipolar Transistor

Characteristics of BDX66 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX66

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX66 is the BDX67.

Replacement and Equivalent for BDX66 transistor

You can replace the BDX66 with the BDX66A, BDX66B, BDX66C, BDX68, BDX68A, BDX68B, BDX68C, MJ11011, MJ11011G, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ11029, MJ11029G, MJ11031, MJ11031G, MJ11033, MJ11033G, MJ4030, MJ4031 or MJ4032.
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