2N6649 Bipolar Transistor

Characteristics of 2N6649 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 1000 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6649

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6649 is the 2N6384.

Replacement and Equivalent for 2N6649 transistor

You can replace the 2N6649 with the 2N6650, 2SA746, 2SA747, 2SA907, BD316, BD318, BDX64, BDX64A, BDX64B, BDX64C, BDX66, BDX66A, BDX66B, BDX66C, BDX68, BDX68A, BDX68B, BDX68C, MJ11011, MJ11011G, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ2500, MJ2501, MJ4030, MJ4031, MJ4032, TIP605, TIP606, TIP607, TIP645, TIP646 or TIP647.
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