BDX68B Bipolar Transistor
Characteristics of BDX68B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -25 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -55 to +200 °C
- Package: TO-3
Pinout of BDX68B
Complementary NPN transistor
Replacement and Equivalent for BDX68B transistor
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