MJ11011 Bipolar Transistor

Characteristics of MJ11011 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ11011

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11011 equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11011 is the MJ11012.

Replacement and Equivalent for MJ11011 transistor

You can replace the MJ11011 with the MJ11011G, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ11029, MJ11029G, MJ11031, MJ11031G, MJ11033 or MJ11033G.

Lead-free Version

The MJ11011G transistor is the lead-free version of the MJ11011.
If you find an error please send an email to mail@el-component.com