MJ11029G Bipolar Transistor

Characteristics of MJ11029G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11029G is the lead-free version of the MJ11029 transistor

Pinout of MJ11029G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11029G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11029G is the MJ11028G.

Replacement and Equivalent for MJ11029G transistor

You can replace the MJ11029G with the MJ11029, MJ11031, MJ11031G, MJ11033 or MJ11033G.
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