MJ11033G Bipolar Transistor

Characteristics of MJ11033G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11033G is the lead-free version of the MJ11033 transistor

Pinout of MJ11033G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11033G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11033G is the MJ11032G.

Replacement and Equivalent for MJ11033G transistor

You can replace the MJ11033G with the MJ11033.
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