MJ1000 Bipolar Transistor
Characteristics of MJ1000 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 90 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ1000
Complementary PNP transistor
Replacement and Equivalent for MJ1000 transistor
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