MJ1000 Bipolar Transistor

Characteristics of MJ1000 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ1000

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJ1000 is the MJ900.

Replacement and Equivalent for MJ1000 transistor

You can replace the MJ1000 with the 2N6384, 2N6385, BDX63, BDX63A, BDX63B, BDX63C, BDX65, BDX65A, BDX65B, BDX65C, BDX67, BDX67A, BDX67B, BDX67C, BDX69, BDX69A, BDX69B, BDX69C, MJ1001, MJ11012, MJ11012G, MJ11014, MJ11014G, MJ11016, MJ11016G, MJ11028, MJ11028G, MJ11030, MJ11030G, MJ11032, MJ11032G, MJ3000, MJ3001, MJ4033, MJ4034, MJ4035, TIP600, TIP601, TIP602, TIP640, TIP641 or TIP642.
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