MJ4031 Bipolar Transistor
Characteristics of MJ4031 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -16 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
Pinout of MJ4031
Complementary NPN transistor
Replacement and Equivalent for MJ4031 transistor
If you find an error please send an email to mail@el-component.com