MJ11011G Bipolar Transistor

Characteristics of MJ11011G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11011G is the lead-free version of the MJ11011 transistor

Pinout of MJ11011G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11011G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11011G is the MJ11012G.

Replacement and Equivalent for MJ11011G transistor

You can replace the MJ11011G with the MJ11011, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ11029, MJ11029G, MJ11031, MJ11031G, MJ11033 or MJ11033G.
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