MJ11011G Bipolar Transistor
Characteristics of MJ11011G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -30 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 1000
- Transition Frequency, min: 4 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-3
- The MJ11011G is the lead-free version of the MJ11011 transistor
Pinout of MJ11011G
Equivalent circuit
Complementary NPN transistor
Replacement and Equivalent for MJ11011G transistor
If you find an error please send an email to mail@el-component.com