BDX64B Bipolar Transistor

Characteristics of BDX64B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX64B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX64B is the BDX65B.

Replacement and Equivalent for BDX64B transistor

You can replace the BDX64B with the BDX64C, BDX66B, BDX66C, BDX68B, BDX68C, MJ11015, MJ11015G, MJ11033, MJ11033G or MJ4032.
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