BDX64A Bipolar Transistor

Characteristics of BDX64A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 117 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX64A

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX64A is the BDX65A.

Replacement and Equivalent for BDX64A transistor

You can replace the BDX64A with the BDX64B, BDX64C, BDX66A, BDX66B, BDX66C, BDX68A, BDX68B, BDX68C, MJ11013, MJ11013G, MJ11015, MJ11015G, MJ11031, MJ11031G, MJ11033, MJ11033G, MJ4031 or MJ4032.
If you find an error please send an email to mail@el-component.com