MJ11031G Bipolar Transistor

Characteristics of MJ11031G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -90 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -50 A
  • Collector Dissipation: 300 W
  • DC Current Gain (hfe): 1000 to 18000
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3
  • The MJ11031G is the lead-free version of the MJ11031 transistor

Pinout of MJ11031G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

MJ11031G equivalent circuit

Complementary NPN transistor

The complementary NPN transistor to the MJ11031G is the MJ11030G.

Replacement and Equivalent for MJ11031G transistor

You can replace the MJ11031G with the MJ11031, MJ11033 or MJ11033G.
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