BDX66C Bipolar Transistor

Characteristics of BDX66C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -55 to +200 °C
  • Package: TO-3

Pinout of BDX66C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX66C is the BDX67C.

Replacement and Equivalent for BDX66C transistor

You can replace the BDX66C with the BDX68C, MJ11015, MJ11015G, MJ11033 or MJ11033G.
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