2N6530 Bipolar Transistor

Characteristics of 2N6530 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 1000 to 10000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6530

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6530 transistor

You can replace the 2N6530 with the 2N6044, 2N6044G, 2N6045, 2N6045G, 2N6388, 2N6388G, 2N6531, 2N6532, 2N6533, BD537, BD543B, BD543C, BD545B, BD545C, BD647, BD649, BD651, BD799, BD801, BD809, BD899, BD899A, BD901, BDT63A, BDT63B, BDT63C, BDT65A, BDT65B, BDT65C, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW73B, BDW73C, BDW73D, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53B, BDX53BG, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, BDX77, D44H11, D44H11FP, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP101, TIP101G, TIP102, TIP102G, TIP131, TIP131G, TIP132, TIP132G, TIP141T or TIP142T.
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