BDT65B Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 12 A
• Collector Dissipation: 125 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BDT65B is the BDT64B.You can replace the BDT65B with the BDT65C, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.