BDT65B Bipolar Transistor
Characteristics of BDT65B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 125 W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT65B
Complementary PNP transistor
Replacement and Equivalent for BDT65B transistor
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