BDW73B Bipolar Transistor
Characteristics of BDW73B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 80 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW73B
Complementary PNP transistor
Replacement and Equivalent for BDW73B transistor
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