BD647 Bipolar Transistor
Characteristics of BD647 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 62.5 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD647
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BD647 is the
BD648.
Replacement and Equivalent for BD647 transistor
You can replace the BD647 with the
2N6044,
2N6044G,
2N6045,
2N6045G,
2N6388,
2N6388G,
2N6530,
2N6532,
2SD1196,
2SD1277A,
2SD1277A-P,
2SD1277A-Q,
2SD1830,
BD649,
BD651,
BD899,
BD899A,
BD901,
BDT63A,
BDT63B,
BDT63C,
BDT65A,
BDT65B,
BDT65C,
BDW41,
BDW41G,
BDW42,
BDW42G,
BDW43,
BDW73B,
BDW73C,
BDW73D,
BDW93B,
BDW93C,
BDW93CF,
BDX33B,
BDX33BG,
BDX33C,
BDX33CG,
BDX33D,
BDX53B,
BDX53BG,
BDX53C,
BDX53CG,
MJF6388,
MJF6388G,
TIP101,
TIP101G,
TIP102,
TIP102G,
TIP131,
TIP131G,
TIP132,
TIP132G,
TIP141T or
TIP142T.
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