BDT63B Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 100 V
• Collector-Base Voltage, max: 100 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 10 A
• Collector Dissipation: 90 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BDT63B is the BDT62B.You can replace the BDT63B with the BDT63C, BDT65B, BDT65C, BDW42, BDW42G, BDW43, MJF6388, MJF6388G or TIP142T.