BD809 Bipolar Transistor
Characteristics of BD809 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 90 W
- DC Current Gain (hfe): 30
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of BD809
Complementary PNP transistor
Replacement and Equivalent for BD809 transistor
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