BDX53D Bipolar Transistor

Characteristics of BDX53D Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 500
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDX53D

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDX53D is the BDX54D.

Replacement and Equivalent for BDX53D transistor

You can replace the BDX53D with the 2N6533, BD651, BDT63C, BDT65C, BDW43, BDW73D, BDX33D, BDX53E or BDX53F.
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