BDT83 Bipolar Transistor

Characteristics of BDT83 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT83

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT83 is the BDT84.

Replacement and Equivalent for BDT83 transistor

You can replace the BDT83 with the BD545B, BD545C, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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