BDT85 Bipolar Transistor

Characteristics of BDT85 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT85

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT85 is the BDT86.

Replacement and Equivalent for BDT85 transistor

You can replace the BDT85 with the BD545C, BDT85F, BDT87, BDT87F, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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