MJF15030G Bipolar Transistor
Characteristics of MJF15030G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 150 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 36 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
- Electrically Similar to the Popular MJE15030G transistor
- The MJF15030G is the lead-free version of the MJF15030 transistor
Pinout of MJF15030G
Complementary PNP transistor
Replacement and Equivalent for MJF15030G transistor
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