BD801 Bipolar Transistor
Characteristics of BD801 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 65 W
- DC Current Gain (hfe): 30
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of BD801
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BD801 is the
BD802.
Replacement and Equivalent for BD801 transistor
You can replace the BD801 with the
2N6045,
2N6045G,
2N6531,
2N6532,
2N6533,
2SC2527,
2SD1196,
2SD1830,
BD543C,
BD545C,
BD649,
BD651,
BD901,
BDT63B,
BDT63C,
BDT65B,
BDT65C,
BDT85,
BDT85F,
BDT87,
BDT87F,
BDW42,
BDW42G,
BDW43,
BDW73C,
BDW73D,
BDW93C,
BDW93CF,
BDX33C,
BDX33CG,
BDX33D,
BDX53C,
BDX53CG,
BDX53D,
BDX53E,
BDX53F,
MJE15028,
MJE15028G,
MJE15030,
MJE15030G,
MJF15030,
MJF15030G,
MJF6388,
MJF6388G,
TIP102,
TIP102G,
TIP132,
TIP132G or
TIP142T.
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