BD801 Bipolar Transistor

Characteristics of BD801 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 65 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of BD801

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BD801 is the BD802.

Replacement and Equivalent for BD801 transistor

You can replace the BD801 with the 2N6045, 2N6045G, 2N6531, 2N6532, 2N6533, 2SC2527, 2SD1196, 2SD1830, BD543C, BD545C, BD649, BD651, BD901, BDT63B, BDT63C, BDT65B, BDT65C, BDT85, BDT85F, BDT87, BDT87F, BDW42, BDW42G, BDW43, BDW73C, BDW73D, BDW93C, BDW93CF, BDX33C, BDX33CG, BDX33D, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, MJF6388, MJF6388G, TIP102, TIP102G, TIP132, TIP132G or TIP142T.
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