BDT65A Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 80 V
• Collector-Base Voltage, max: 80 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 12 A
• Collector Dissipation: 125 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the BDT65A is the BDT64A.You can replace the BDT65A with the BDT65B, BDT65C, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.