BDT63A Bipolar Transistor

Characteristics of BDT63A Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT63A

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT63A is the BDT62A.

Replacement and Equivalent for BDT63A transistor

You can replace the BDT63A with the 2N6388, 2N6388G, BDT63B, BDT63C, BDT65A, BDT65B, BDT65C, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388, MJF6388G, TIP141T or TIP142T.
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