BD899A Bipolar Transistor
Characteristics of BD899A Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 8 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD899A
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BD899A is the
BD900A.
Replacement and Equivalent for BD899A transistor
You can replace the BD899A with the
2N6044,
2N6044G,
2N6045,
2N6045G,
2N6388,
2N6388G,
2N6530,
2N6532,
2SD1196,
2SD1277A,
2SD1277A-P,
2SD1277A-Q,
2SD1830,
BD647,
BD649,
BD651,
BD899,
BD901,
BDT63A,
BDT63B,
BDT63C,
BDT65A,
BDT65B,
BDT65C,
BDW41,
BDW41G,
BDW42,
BDW42G,
BDW43,
BDW73B,
BDW73C,
BDW73D,
BDW93B,
BDW93C,
BDW93CF,
BDX33B,
BDX33BG,
BDX33C,
BDX33CG,
BDX33D,
BDX53B,
BDX53BG,
BDX53C,
BDX53CG,
MJF6388,
MJF6388G,
TIP101,
TIP101G,
TIP102,
TIP102G,
TIP131,
TIP131G,
TIP132,
TIP132G,
TIP141T or
TIP142T.
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