BDW41G Bipolar Transistor

Characteristics of BDW41G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 85 W
  • DC Current Gain (hfe): 1000
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • The BDW41G is the lead-free version of the BDW41 transistor

Pinout of BDW41G

Here is an image showing the pin diagram of this transistor.

Equivalent circuit

BDW41G equivalent circuit

Complementary PNP transistor

The complementary PNP transistor to the BDW41G is the BDW46G.

Replacement and Equivalent for BDW41G transistor

You can replace the BDW41G with the BDW41, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
If you find an error please send an email to mail@el-component.com