BDX33BG Bipolar Transistor
Characteristics of BDX33BG Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The BDX33BG is the lead-free version of the BDX33B transistor
Pinout of BDX33BG
Equivalent circuit
Complementary PNP transistor
Replacement and Equivalent for BDX33BG transistor
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