BDW63B Bipolar Transistor

Characteristics of BDW63B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW63B

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDW63B is the BDW64B.

Replacement and Equivalent for BDW63B transistor

You can replace the BDW63B with the 2SC1986, 2SC2316, 2SD823, BD243B, BD243C, BD537, BD543B, BD543C, BD545B, BD545C, BD647, BD649, BD651, BD799, BD801, BD809, BD899, BD899A, BD901, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW23B, BDW23C, BDW63C, BDW63D, BDW73B, BDW73C, BDW73D, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53B, BDX53BG, BDX53C, BDX53CG, BDX53D, BDX53E, BDX53F, BDX77, D44H11, D44H11FP, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, TIP41D, TIP41E, TIP41F, TIP42D, TIP42E or TIP42F.
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