BDW63B Bipolar Transistor
Characteristics of BDW63B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 6 A
- Collector Dissipation: 60 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW63B
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BDW63B is the
BDW64B.
Replacement and Equivalent for BDW63B transistor
You can replace the BDW63B with the
2SC1986,
2SC2316,
2SD823,
BD243B,
BD243C,
BD537,
BD543B,
BD543C,
BD545B,
BD545C,
BD647,
BD649,
BD651,
BD799,
BD801,
BD809,
BD899,
BD899A,
BD901,
BDT83,
BDT83F,
BDT85,
BDT85F,
BDT87,
BDT87F,
BDW23B,
BDW23C,
BDW63C,
BDW63D,
BDW73B,
BDW73C,
BDW73D,
BDX33B,
BDX33BG,
BDX33C,
BDX33CG,
BDX33D,
BDX53B,
BDX53BG,
BDX53C,
BDX53CG,
BDX53D,
BDX53E,
BDX53F,
BDX77,
D44H11,
D44H11FP,
MJE15028,
MJE15028G,
MJE15030,
MJE15030G,
MJF15030,
MJF15030G,
TIP41D,
TIP41E,
TIP41F,
TIP42D,
TIP42E or
TIP42F.
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