BD535K Bipolar Transistor

Characteristics of BD535K Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40 to 100
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD535K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD535K transistor can have a current gain of 40 to 100. The gain of the BD535 will be in the range from 40 to 0, for the BD535J it will be in the range from 30 to 75.

Complementary PNP transistor

The complementary PNP transistor to the BD535K is the BD536K.

Replacement and Equivalent for BD535K transistor

You can replace the BD535K with the 2N6487, 2N6487G, 2N6488, 2N6488G, BD203, BD303, BD537, BD537K, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD797, BD799, BD801, BD807, BD809, BD907, BD909, BD911, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDT91, BDT91F, BDT93, BDT93F, BDT95, BDT95F, BDX77, MJE15028, MJE15028G, MJE2801T, MJE3055T, MJE3055TG, MJF3055 or MJF3055G.

Equivalent

Same transistor is also available in:
  • TO-220 package, BD533: 50 watts
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