BD536K Bipolar Transistor

Characteristics of BD536K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40 to 100
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD536K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD536K transistor can have a current gain of 40 to 100. The gain of the BD536 will be in the range from 40 to 0, for the BD536J it will be in the range from 30 to 75.

Complementary NPN transistor

The complementary NPN transistor to the BD536K is the BD535K.

Replacement and Equivalent for BD536K transistor

You can replace the BD536K with the 2N6490, 2N6490G, 2N6491, 2N6491G, BD204, BD304, BD538, BD538K, BD708, BD710, BD712, BD744A, BD744B, BD744C, BD798, BD800, BD802, BD808, BD810, BD908, BD910, BD912, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT92, BDT92F, BDT94, BDT94F, BDT96, BDT96F, BDX78, MJE15029, MJE15029G, MJE2901T, MJE2955T, MJE2955TG, MJF2955 or MJF2955G.

Equivalent

Same transistor is also available in:
  • TO-220 package, BD534: 50 watts
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