BD537K Bipolar Transistor

Characteristics of BD537K Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 40 to 100
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD537K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD537K transistor can have a current gain of 40 to 100. The gain of the BD537 will be in the range from 40 to 0, for the BD537J it will be in the range from 30 to 75.

Complementary PNP transistor

The complementary PNP transistor to the BD537K is the BD538K.

Replacement and Equivalent for BD537K transistor

You can replace the BD537K with the 2N6488, 2N6488G, BD709, BD711, BD743B, BD743C, BD799, BD801, BD809, BD909, BD911, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDT93, BDT93F, BDT95, BDT95F, BDX77, MJE15028, MJE15028G, MJE15030, MJE15030G, MJF15030, MJF15030G, MJF3055 or MJF3055G.
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