BD535J Bipolar Transistor

Characteristics of BD535J Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 30 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD535J

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BD535J transistor can have a current gain of 30 to 75. The gain of the BD535 will be in the range from 40 to 0, for the BD535K it will be in the range from 40 to 100.

Complementary PNP transistor

The complementary PNP transistor to the BD535J is the BD536J.

Replacement and Equivalent for BD535J transistor

You can replace the BD535J with the 2N6098, 2N6099, 2N6100, 2N6101, 2N6487, 2N6487G, 2N6488, 2N6488G, BD203, BD303, BD537J, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD797, BD799, BD801, BD807, BD809, BD907, BD909, BD911, BDT91, BDT91F, BDT93, BDT93F, BDT95, BDT95F, BDX77, MJE2801T, MJE3055T, MJE3055TG, MJF3055 or MJF3055G.

Equivalent

Same transistor is also available in:
  • TO-126 package, BD442G: 36 watts
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