BDT81 Bipolar Transistor

Characteristics of BDT81 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT81

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT81 is the BDT82.

Replacement and Equivalent for BDT81 transistor

You can replace the BDT81 with the 2SC4552, 2SC4552-K, 2SC4552-L, 2SC4552-M, BD545A, BD545B, BD545C, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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