BDT81F Bipolar Transistor

Characteristics of BDT81F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT81F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT81F is the BDT82F.

Replacement and Equivalent for BDT81F transistor

You can replace the BDT81F with the 2SC4552, 2SC4552-K, 2SC4552-L, 2SC4552-M, BD545A, BD545B, BD545C, BDT81, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, MJF6388 or MJF6388G.
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