BDT91 Bipolar Transistor

Characteristics of BDT91 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT91

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT91 is the BDT92.

Replacement and Equivalent for BDT91 transistor

You can replace the BDT91 with the BDT91F, BDT93, BDT93F, BDT95 or BDT95F.
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