BDT91F Bipolar Transistor

Characteristics of BDT91F Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 32 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT91F

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the BDT91F is the BDT92F.

Replacement and Equivalent for BDT91F transistor

You can replace the BDT91F with the BDT91, BDT93, BDT93F, BDT95 or BDT95F.
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