MJF3055G Bipolar Transistor

Characteristics of MJF3055G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 90 V
  • Collector-Base Voltage, max: 90 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular MJE3055T transistor
  • The MJF3055G is the lead-free version of the MJF3055 transistor

Pinout of MJF3055G

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJF3055G is the MJF2955G.

Replacement and Equivalent for MJF3055G transistor

You can replace the MJF3055G with the BD711, BD743C, BD911, BDT95, BDT95F or MJF3055.
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